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Sanyo 195 Watt Solar Panel HIP-195DA3

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Quick Overview

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Features

HIP-195DA3 Bifacial Photovoltaic Module
  • 195-249 Watt Peak Output
  • Cell Efficiency: 19.3%
  • Module Efficiency: Depends on mounting environment
  • 2 Year Workmanship Warranty, 20 Year Power Output
  • Monocrystalline cells for high-efficiency and uniform dark color.
  • Perfect for high-power grid-tie when limited on space
  • 20 Years Power Output
Quantity discounts available!

Sanyo 195 Watt Solar Panel HIP-195DA3

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Specifications

Model HIP-195DA3
Rating 195 Watts
Type HIT Bifacial Monocrystalline
Connection 39.4" No. 12 AWG MC3 Cable
Frame Black anodized aluminum with tempered glass
Warranty 2 Years Workmanship

Manufacturer Specification Sheets

View FileHIP-195DA3 brochure in PDF format.    Size: (764.97 KB)
View FileHIP-195DA3 data sheet in PDF format    Size: (638 KB)
View FileHIP-195DA3 warranty in PDF format    Size: (155.28 KB)
View FileHIP-195DA3 installation manual in PDF format    Size: (242.16 KB)
View FileHIP-195DA3 installation manual in PDF forma    Size: (242.16 KB)

Details

High Efficiency
HIT Double bifacial solar panels are World leaders in sunlight conversion efficiency, helping customers to enjoy the maximum power per square foot from available space.

Power Guarantee
SANYO guarantees customers will receive 100% of the panel’s rated power (or more) at the time of purchase, enabling owners to generate more kWh per rated watt.

BifacialBifacial Effect
The back face of a HIT Double panel generates electricity from ambient light reflected off surrounding surfaces, and combines with power from the front face of the panel. Depending upon system design and site albedo, this results in up to 30% higher power generation (more kWh) per square foot.

Application Possibilities
Architectural, Awnings, Balconies, Bus Shelters, Walkway Covers, Deck & Porch Coverings, Canopies, Carports, Trellises, Fences, Facades, Siding, Trellises, Tracking Systems, BIPV, Ground Mount, Roof Mount, Skylights, and More!

Proprietary Technology
HIT bifacial solar cells are hybrids of single crystalline silicon surrounded by ultra-thin amorphous silicon layers, available solely from SANYO.

High Temperature Performance
As temperatures rise, HIT Double solar panels produce more electricity than conventional solar panels at the same temperature, due to their low temperature coefficient.

Quality Products
SANYO silicon wafers are made in California USA, and assembled in Mexico at SANYO’s certified factory. ISO 9001 (quality), 14001 (environment), and 18001 (safety).

Valuable Features
HIT Double panels operate silently and have no moving parts. A double glass structure allows some sunlight to penetrate portions of the panel, creating brilliant light and shadows for aesthetic and architectural applications. HIT Double panels are perfect for areas with performance-based incentives and tradable energy credits.

Quality Products
SANYO silicon wafers located inside HIT solar panels are made in California, USA, and the panels are assembled in an ISO 9001 (quality), 14001 (environment), and 18001 (safety) certified factory. The panels have a Limited 20-Year Power Output and 5-Year Product Workmanship Warranty.



*HIT stands for Heterojunction with Intrisic Thin Layer. Supported by the New Energy and Industrial Technology Development Organization (NEDO) in Japan. Specifications, product design, and information on this website are subject to change without notice.

About HIT Technology

The SANYO HIT (Heterojunction with Intrinsic Thin layer) solar cell is composed of a single thin crystalline silicon wafer surrounded by ultra-thin amorphous silicon layers. This product provides industry-leading performance and value using state-of-the-art manufacturing techniques.

Crystalline silicon solar cell and HIT solar cell structure comparison
High output produced by minimizing power generation losses in the non-regular grid area on the solar cell surface.

HIT solar cells improve boundary characteristics and reduce power generation losses by forming impurity-free i-type amorphous silicon layers between the crystalline base and p- and n-type amorphous silicon layers.

HIT